A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells
03 Nov 2015 | Online Presentations | Contributor(s): Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden
IWCE 2015 presentation.
Quantum Wells, Heterostructures and Superlattices
23 Jul 2010 | Teaching Materials | Contributor(s): Stephen M. Goodnick, Dragica Vasileska
this is an overview of the analysis and the application of quantum wells, heterostructures and superlattices.
Bulk Monte Carlo: Implementation Details and Source Codes Download
01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to simulate the stochastic motion of particles subject to collision processes in some medium. This process of random walk generation may be used to evaluate integral equations and is connected to the …
Self-Heating Effects in Nano-Scale Devices. What do we know so far ...
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in this study are also outlined.
Is dual gate device structure better from a thermal perspective?
01 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation illustrates several points. First, it is shown that in nanoscale devices there is less degradation due to heating effects due to non-stationary nature of the carrier transport (velocity overshoot) in the device, which, in turn, makes less probable the interaction with phonons. Second, it is shown that degradation can further be reduced if using Silicon on Diamond devices. Third, it is quantitatively demonstrated that dual gate devices are better from a thermal perspective ...