1. nanoHUB-U: Thermal Resistance in Electronic Devices

   This short course gives an introduction to the fundamentals of device heating, to simple methods...

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1. What's the mobility?

   08 Sep 2021 | Downloads | Contributor(s): Eric Pop

   This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...

2. Openning Remarks: The Stanford NEEDS Program

   28 Sep 2017 | Online Presentations | Contributor(s): Eric Pop

3. A Device to Systems Perspective on Modeling Nanoelectronic Systems

   28 Sep 2017 | Workshops | Contributor(s): Mark Lundstrom, Eric Pop

   This workshop is designed for graduate students and engineers seeking to assess the system performance of novel technologies. The workshop will give material and device researchers a better understanding of system constraints, and it will give designers a better understanding of how to assess...

4. 2D Materials and Graphene: Science to Nanofunctions

   04 Oct 2017 | Online Presentations | Contributor(s): Eric Pop, Saurabh Vinayak Suryavanshi

5. Energy Dissipation at the Nanoscale: from graphene to phase-change materials

   20 Dec 2011 | Online Presentations | Contributor(s): Eric Pop

   This talk will present recent highlights from our studies of dissipation in novel nanoelectronics based on graphene and phase-change materials. We have investigated both Joule heating and Peltier cooling in graphene electronics, and found that the latter could be tuned to partially remove the...

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1. 

   Stanford 2D Semiconductor (S2DS) Transistor Model

   11 Aug 2018 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D39882Q1F

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

2. 

   Stanford 2D Semiconductor (S2DS) Transistor Model

   04 Apr 2016 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3ZC7RV9X

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

3. 

   Stanford 2D Semiconductor (S2DS) Transistor Model

   22 Oct 2014 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3QJ78004

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

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