18 Feb 2021 | Contributor(s): Ning Yang, Tong Wu, Jing Guo
Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.
Recursive algorithm for NEGF in Python GPU version
02 Feb 2021 | Downloads | Contributor(s): Ning Yang, Tong Wu, Jing Guo
This folder contains two Python functions for GPU-accelerated simulation, which implements the recursive algorithm in the non-equilibrium Green’s function (NEGF) formalism. Compared to the matlab implementation , the GPU version allows massive parallel running over many cores on GPU...
Spin Quantum Gate Lab
26 Apr 2019 | Tools | Contributor(s): Tong Wu, Daniel Volya, Jing Guo
Simulate the device-level characteristics of spin-based quantum gates.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Introduction to Schred
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28 Jun 2007 | Series | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...
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Florida Ferroelectric Tunnel Junction Device Model
09 Sep 2020 | Contributor(s): Tong Wu, Jing Guo | doi:10.21981/6TFD-GW48
A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.
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