Nanosheet FET
24 May 2023 | Contributor(s): Jing Guo, Ning Yang, Qimao Yang
Simulate Nanosheet FET and FinFET based on Quantum Transport
Power Diode Lab
21 Nov 2022 | Contributor(s): Jing Guo, Ning Yang
Calculate the critical breakdown electric field, break down voltage, depletion region thickness, and specific on resistance of power diodes.
2D Material Carrier Concentration Lab
15 Nov 2022 | Contributor(s): Jing Guo, Ning Yang
Simulate density of states, carrier statistics, and carrier concentrations in two-dimensional semiconductors and graphene
2DFET
18 Feb 2021 | Contributor(s): Ning Yang, Tong Wu, Jing Guo
Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.
Recursive algorithm for NEGF in Python GPU version
02 Feb 2021 | Downloads | Contributor(s): Ning Yang, Tong Wu, Jing Guo
This folder contains two Python functions for GPU-accelerated simulation, which implements the recursive algorithm in the non-equilibrium Green’s function (NEGF) formalism. Compared to the matlab implementation [1], the GPU version allows massive parallel running over many cores on GPU...
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Florida Ferroelectric Tunnel Junction Device Model
09 Sep 2020 | Contributor(s): Tong Wu, Jing Guo | doi:10.21981/6TFD-GW48
A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.
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