Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
Assessing the MVS Model for Nanotransistors
25 Mar 2014 | Presentation Materials | Contributor(s): Siyang Liu, Xingshu Sun, Mark Lundstrom
The MIT Virtual Source model  is a recently developed compact model for nanoscale transistor. It is a semi-empirical model based on the physics of electron transport at nanoscale. The model requires only a few input parameters, most of which can be obtained from experimental data. This model produces an accurate result as well as maintains simplicity.