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Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels
15 Oct 2015 | Online Presentations | Contributor(s): Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct from the bulk-like environment found in thicker channels. Using the non- orthogonal tight-binding method Extended Huckel Theory (EHT), III-IV/High-k dielectric interfaces are constructed and...
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