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Specific Resistance for Copper Interconnects
20 Nov 2017 | Contributor(s): Daniel A. Valencia-Hoyos, Gustavo A Valencia, Daniel F Mejia, Kuang-Chung Wang, Zhengping Jiang, Gerhard Klimeck, Michael Povolotskyi
This tool calculates the specific resistance $rho(alpha,beta,gamma)$ based on the atomistic model reported in preprint arXiv:1701.04897
Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels
15 Oct 2015 | Online Presentations | Contributor(s): Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct...
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