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Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011 | Contributor(s): Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...
Essential Aspects of Negative Bias Temperature Instability (NBTI)
01 May 2011 | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam
We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping...
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
30 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
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23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its...
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
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30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...
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Network for Computational Nanotechnology (NCN) is a National Science Foundation (NSF) gateway and research network with a mission to enable education and research in nanoscience for nanotechnology applications. NCN currently focuses on nanoelectronics, nanoelectromechanics, nanomaterials,...
NCN@Purdue student seminar series
The NCN@Purdue student seminar series provides a platform for students to present their research and get feedback from fellow NCN students. This is an excellent opportunity for the presenter to practice and refine a talk for an upcoming conference, as well as improve presentation skills. It is...
NCN Student Banquet
Each Spring and Fall Purdue NCN students gather for a banquet organized by the NCN@Purdue SLC.
NCN Student Banquet Spring 2009
Date: April 21, 2009 (Tuesday), 6:00pm-8:30pm
Venue: East Faculty Lounge, Purdue Memorial Union (PMU), Purdue University
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