III-V Tunnel FET Model 1.0.1

By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1

Penn State University

The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

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Version 1.0.1 - published on 21 Apr 2015 doi:10.4231/D30Z70X8D - cite this

Licensed under NEEDS Modified CMC License according to these terms

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    Clayton Simpson

    3.0 out of 5 stars

    Interesting electronics research as for me personally. I think that all these researches are useful like papersowl review at essayreviewexpert.com/review/papersowl/ resource. It is always better spent some time on education rather than do nothing and have problems in the future. Where I can read the full review of this? Could a regular student use this information in the diploma project or coursework? Please, write an answer to that because I really need this information for my workflow. 

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