III-V Tunnel FET Model 1.0.1

By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1

Penn State University

The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.0.1 - published on 21 Apr 2015 doi:10.4231/D30Z70X8D - cite this

Licensed under NEEDS Modified CMC License according to these terms

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787 fix hidden-state issues for RF analysis
Proposed by Geoffrey Coram @ on
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720 Convert to being charge-based model
Proposed by Ken Kundert @ on
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694 Remove analysis() calls; support more than "dc" and "tran"
Proposed by Geoffrey Coram @ on
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