Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0

By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3

1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory

A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

Listed in Compact Models

Additional materials available

Version 1.0.0 - published on 07 Apr 2016 doi:10.4231/D30C4SM1H - cite this

Licensed under NEEDS Modified CMC License according to these terms