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By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3
1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory
A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
Listed in Compact Models
Additional materials available
Version 1.0.0 - published on 07 Apr 2016 doi:10.4231/D30C4SM1H - cite this
Licensed under NEEDS Modified CMC License according to these terms
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