Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

Name: Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
Published: 2016-04-06
License: NEEDS Modified CMC License

Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0

By Jorge-Daniel Aguirre Morales¹, Sébastien Frégonèse², Chhandak Mukherjee³, Cristell Maneux³, Thomas Zimmer³

1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory

A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

Version 1.0.0 - published on 07 Apr 2016 doi:10.4231/D30C4SM1H - cite this

Licensed under NEEDS Modified CMC License according to these terms

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Recent Questions (1)
1988	What parameters are affected, in the parameters given above ,when the FET is scaled down further (i.e) from Micrometers to nanometers.?? Asked by Hit Man @ 1:22 pm on 23 Dec 2017 • Open • 0		0 Like