MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0

By Ujwal Radhakrishna1, Dimitri Antoniadis1

Massachusetts Institute of Technology (MIT)

The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

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Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D3G15TC12 - cite this

Licensed under NEEDS Modified CMC License according to these terms

Description

See more compact models using the MIT Virtual Source (MVS) Model

The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

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Key References

Radhakrishna, U.; Lan Wei; Dong-Seup Lee; Palacios, T.; Antoniadis, D., "Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection," Electron Devices Meeting (IEDM), 2012 IEEE International, 10-13 Dec. 2012, doi: 10.1109/IEDM.2012.6479038.

Ujwal Radhakrisna, "A Compact Transport and Charge Model for GaN-based High Electron Mobility Transistors for RF applications," Masters Thesis, Massachusetts Institute of Technology, June 2013.

U. Radhakrishna, D. Piedra, Y. Zhang, T. Palacios, D. Antoniadis, "High Voltage GaN HEMTs Compact Model: Experimental Verification, Field Plate Optimization and Charge Trapping," Electron Devices Meeting (IEDM), 2013 IEEE International, 9-11, 2013.

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