MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0
The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D3G15TC12 - cite this
Licensed under NEEDS Modified CMC License according to these terms
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NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.