A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from C2M0025120D.
|1.0.0||Feb 22, 2017||10.4231/D3QF8JK88||published||view version »|
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.