nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0

By Yanfei Shen1, Saeed Mohammadi1

Purdue University

A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.

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Version 1.0.0 - published on 05 Jan 2017 doi:10.4231/D3833N04K - cite this

Licensed under NEEDS Modified CMC License according to these terms


This is a high frequency nonlinear model that accurately captures the DC, RF and noise behavior of NMOS transistors on standard 45nm SOI technology. The model employs the MIT-VS model as the DC core, adds to it various RF features and a new noise model.

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Key References

Shaloo Rakheja, Dimitri Antoniadis (2015). MVS Nanotransistor Model (Silicon). nanoHUB. doi:10.4231/D3RR1PN6M

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Initial release of the model.

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