The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS₂. Version 1.0.0 represents the initial release. The model relies on the drift-diffusion approach, including quantum capacitance, simple band structure, velocity saturation, contact resistance and self-heating effects that are specific to 2D materials. The model has been developed for double-gate devices and employs approximations to simplify integrals and enable compact modeling of 2D-FETs. Caution should be taken while using the model for circuit simulation. This is the first attempt to develop a model for 2D semiconductors based on physics and experimental data with a minimum of fitting parameters. Future updates to the model are planned to make it more robust and accurate. As of now the model is stable for DC and limited AC simulations. For reference, please examine the sample circuit bench provided.

The equations and models used are outlined in the manual provided. The manual also contains details about the parameters and extraction method. Almost all parameters are physics-based and have been derived from experimental studies available at the time of this release. Some parameters will be updated in future versions of the model, as new data and other improvements become available.

• Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Verilog-A(VA | 24 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Benchmarks(ZIP | 3 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Parameters(ZIP | 264 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Experimental Data(ZIP | 113 KB)
• Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Manual(PDF | 1 MB)
• License terms

Researchers should cite this work as follows:

• Saurabh Vinayak Suryavanshi; Eric Pop (2016). Stanford 2D Semiconductor (S2DS) Transistor Model. (Version 1.1.0). nanoHUB. doi:10.4231/D3ZC7RV9X

  BibTex | EndNote

1. 2D FET
2. 2D Semiconductor
3. Compact Model
4. drift-diffusion
5. MoS2
6. MoS2 Transistor
7. self-heating effects

Version 1.1.0 :

1) Improved convergence for transient simulations. (Tested for HSPICE 2013)

2) Additional flags to include gate field and high field dependencies on mobility.

3) Include effects of traps, impurities.