The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node
Citations Non-affiliated (4) | Affiliated (1)
- Baolin Wei, Chao Lu, (2018), "Transition Metal Dichalcogenide MoS 2 Field-Effect Transistors For Analog Circuits: A Simulation Study", AEU-International Journal Of Electronics And Communications, Elsevier: pg: 1-22, (DOI: 10.1016/j.aeue.2018.02.025)
Kuan-Ting Chen, Ren-Yu He, Chia-Feng Lee, Ming-Ting Wu, Shu-Tong Chang, (2017), "Compact Conduction Band Model For Transition-metal Dichalcogenide Alloys", Microlectronics Reliability, : pg: 1-7, (DOI: 10.1016/j.microrel.2017.04.022)
S. Suryavanshi, E. Pop, (2016), "S2DS: Physics-Based Compact Model For Circuit Simulation Of Two-Dimensional Semiconductor Devices Including Non-Idealities", Journal of Applied Physics, 120, 22: pg: 224503-1-224503-26
Kirby Smithe, Chris English, Saurabh Suryavanshi, E. Pop, (2016), "Enhanced Electrical Transport And Performance Projections Of Synthetic Monolayer MoS2 Devices", arXiv.org > cond-mat, : pg: 1-26
K. Smithe, Saurabh Suryavanshi, Miguel Mun?oz-Rojo, Aria Tedjarati, E. Pop, (2017), "Low Variability In Synthetic Monolayer MoS2 Devices", ACS Paragon Plus Environment, : pg: 1-20, (DOI: 10.1021/acsnano.7b04100 )
NEEDS: Nano-Engineered Electronic Device Simulation Node
This publication belongs to the NEEDS: Nano-Engineered Electronic Device Simulation Node group.