Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0

By Saurabh Vinayak Suryavanshi1, Eric Pop1

Stanford University

The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.1.0 - published on 04 Apr 2016 doi:10.4231/D3ZC7RV9X - cite this Last public release: 1.2.0

Licensed under NEEDS Modified CMC License according to these terms

Usage

Views

44

318 203 144 155 98 112 162 193 228 198 267 268 267 198 127 168 141 120 208 138 110 118 123 130 124 111 111 96 89 75 70 52 44

The above numbers reflect non-unique views of the page, which may include multiple views in the same day by the same user.

Downloads

19

61 34 19 33 17 13 38 28 33 38 80 57 33 35 38 48 55 60 71 31 28 33 33 21 40 24 35 25 14 6 26 11 19

The above numbers reflect non-unique user access to the linked content, which includes but is not limited to primary access button clicks, bundle downloads, and supporting documents.