Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0

By Saurabh Vinayak Suryavanshi1, Eric Pop1

Stanford University

The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

Download Bundle

Additional materials available

Version 1.1.0 - published on 04 Apr 2016 doi:10.4231/D3ZC7RV9X - cite this

Licensed under NEEDS Modified CMC License according to these terms

Usage

Views

198

318 203 144 155 98 112 162 193 228 198 267 198

The above numbers reflect non-unique views of the page, which may include multiple views in the same day by the same user.

Downloads

35

61 34 19 33 17 13 38 28 33 38 80 35

The above numbers reflect non-unique user access to the linked content, which includes but is not limited to primary access button clicks, bundle downloads, and supporting documents.