Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0

By Saurabh Vinayak Suryavanshi1, Eric Pop1

Stanford University

The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.0.0 - published on 14 Aug 2018 doi:10.4231/D3F18SH56 - cite this

Licensed under NEEDS Modified CMC License according to these terms

3671 total view(s), 1776 download(s)

2 review(s) (Review this)

0 wish(es) (Add a new wish)

0 questions (Ask a question)

0 citation(s)

Reviews

Write a review

  1. 0 Like 0 Dislike

    Jeff Thorsen

    4.0 out of 5 stars

    Very informative information. I wrote a term paper on this topic. The writing process itself has always been stressful for me. Therefore, I turned to cheap dissertation services for writing my assignments. Thanks to that, I was able to finish the semester normally and I forgot what stress means.

    Reply Report abuse

    Please login to vote.

  2. 0 Like 0 Dislike

    Alex Dunn

    5.0 out of 5 stars

    Stanford 2D Semiconductor is an excellent study that is of great importance. This will help reduce the power consumption of modern computer technology. Such studies should receive more funding to be more effective. You can read these articles at the professional research paper writing service. This can be found at the website https://uk.papersowl.com/research-paper-writing-service. Reducing temperatures in processors is one of the main problems of modern technological development. The heat inside the semiconductors creates problems for compact computer engineering.

    Reply Report abuse

    Please login to vote.

NEEDS: New Era Electronic Devices and Systems

NEEDS: New Era Electronic Devices and Systems group image