By Farzan Jazaeri1, Jean-Michel Sallese1, Majid Shalchian2, Matthias Bucher3, Nikolaos Makris4, Bertrand Parvais5

1. École polytechnique fédérale de Lausanne (EPFL) 2. Amirkabir University of Tehnology 3. Technical university of crete 4. ECE Technical University of Crete / IESL Foundation for Research and Technology-Hellas 5. IMEC

The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the central concept is based on charge linear...

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Version 3.0.0 - published on 04 May 2020 doi:10.21981/PSE5-PP70 - cite this

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The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based  and the central concept is based on the linear approximation of the channel charge density with respect to the surface potential, leading to explicit and continuous expressions for charges and current in all the regions of operation, including subthreshold. In addition, an effective circuit design methodology based on the pinchoff surface potential, the pinchoff voltage and the key concept of inversion coefficient (IC) is proposed, likewise for silicon MOSFET circuits. 

The EPFL HEMT model has been developed by EDLAB, École Polytechnique Fédérale de Lausanne,(EPFL), Lausanne, Switzerland in cooperation with Amirkabir University of Technology, Technical University of Crete(TUC), Chania, Crete, Greece, and IMEC.

Redistribution and use in source and binary forms with or without modification,  are permitted provided that the following conditions are met:                                                                   

  • Redistributions of source code must retain the above copyright notice and this list of conditions
  • All advertising materials mentioning features or use of this model must cite the model, related papers, i.e., 
    • [1] F. Jazaeri and J. Sallese, "Charge-Based EPFL HEMT Model," in IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1218-1229, March 2019.
    • [2] F. Jazaeri, M. Shalchian, and J. Sallese, "Transcapacitances in EPFL-HEMT Model," in IEEE Transactions on Electron Devices, 2019.
  • and display the following acknowledgement:
    • "This study/product includes EPFL-HEMT model developed by ED-Lab, EPFL" 
  • The name of the EDLAB and the names of its contributors must be used to endorse or promote products derived from this model.   

  Your feedback is most welcome. Please direct inquiries, comments etc. to
  Dr. Farzan Jazaeri, EPFL (Farzan.Jazaeri@epfl.ch, +41 78 785 52 95)
  Dr. Jean-Michel Sallese, EPFL (Jean-Michel.Sallese@epfl.ch, +41 21 693 46 02)

  Main contributions:

  •   Coordination Dr. Farzan Jazaeri, EPFL.
  •   Contributions to model formulation Drs. Farzan Jazaeri and JeanMichel Sallese, EPFL.
  •   Coding, implementation and testing Dr. Majid Shalchian, Amirkabir University
  • Coding, implementation and testing Dr. Matthias Bucher and Nikolaos Makris, School of Electrical and Computer Engineering, Technical University of  Crete(TUC), Chania, Crete, Greece.
  • Contributions to code standardization, Dr. Bertrand Parvais, IMEC. 

This model and its code are confidential property of the EPFL HEMT model   development team. Its distribution to third - parties is subject to NDA (non - disclosure agreement) conditions.  The model and its code are made available 'as is', without any warranty regarding its functionality or fitness of performance. Any usage of this code supposes that the name of the model, the authors of the present code and contributors are suitably acknowledged. The EPFL HEMT model code is continuously being tested, corrected and extended. Updates to the code may be frequent. Backward compatibility of code updates is not guaranteed.

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