UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 25 Mar 2015 doi:10.4231/D37940V7H - cite this
Licensed under NEEDS Modified CMC License according to these terms
Supporting Docs
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Verilog-A(VA | 17 KB)
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Benchmarks(ZIP | 172 KB)
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Parameters(TXT | 54 B )
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Experimental Data(XLSX | 15 KB)
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Manual(PDF | 1 MB)- W.Cao_ 2D TMD FET model.pdf(PDF | 2 MB)
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.