UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0

By Wei Cao1, Kaustav Banerjee1

University of California Santa Barbara

a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

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Version 1.0.0 - published on 25 Mar 2015 doi:10.4231/D37940V7H - cite this

Licensed under NEEDS Modified CMC License according to these terms


Version Released DOI Handle Status
1.0.0 Mar 25, 2015 10.4231/D37940V7H published view version »