Compact Carbon Nanotube Field-Effect Transistor Model (CCAM) is a semi-physical carbon nanotube compact model that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The model allows, for a given gate length, geometry scaling from single-finger single-tube to multi-finger multi-tube transistors. The features include parasitics, ambipolar transport, dynamic behavior and trap model. The model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators.

• CCAM Compact Carbon Nanotube Field-Effect Transistor Model 2.0.3 Verilog-A(VA | 14 KB)
• CCAM Compact Carbon Nanotube Field-Effect Transistor Model 2.0.3 Benchmarks(ZIP | 29 KB)
• CCAM Compact Carbon Nanotube Field-Effect Transistor Model 2.0.3 Parameters(ZIP | 19 KB)
• CCAM Compact Carbon Nanotube Field-Effect Transistor Model 2.0.3 Experimental Data(ZIP | 183 KB)
• CCAM Compact Carbon Nanotube Field-Effect Transistor Model 2.0.3 Manual(PDF | 139 KB)
• License terms

Researchers should cite this work as follows:

• Michael Schroter; Max Haferlach; Martin Claus (2015). CCAM Compact Carbon Nanotube Field-Effect Transistor Model. (Version 2.0.3). nanoHUB. doi:10.4231/D3VD6P595

  BibTex | EndNote

1. CNTFETs
2. Compact Model
3. transistors

Added parameter sets.