Verilog-A implementation of the compact model for organic thin-film transistors oTFT 2.04.01

By Ognian Marinov

McMaster University, Hamilton, ON, Canada

Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 2.04.01 - published on 16 Jun 2015 doi:10.4231/D3R785Q3B - cite this

Licensed under NEEDS Modified CMC License according to these terms



The oTFT compact models are aimed to support the bias enhancement of the charge carrier mobility and the significant contact effect in organic thin-film transistors (OTFTs). The oTFT models are “mirror” of the TFT structure.
The current version 2.04.01 of the oTFT compact model level 2 also supports other effects, such as channel conductance modulation (analogous to the channel length modulation in MOS transistors) and Ohmic and non-linear leakages. Quasi-static charge sub-model supports frequency and temporal response by AC and transient simulations.
The model is with default values of parameters for organic thin-film transistors, but otherwise, the oTFT models are also applicable to other thin-film transistors (TFTs). Just the model parameters are with other values.
The Verilog-A code, manual and data from benchmark simulations are available at
The manual guides through the implantation and usage of the code, and provides links to the background of the oTFT compact models. The background of the oTFT 2.04.01 compact model is explained in the publications in the list of references.

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Key References

  1. O. Marinov, M. J. Deen, U. Zschieschang, H. Klauk, "Organic Thin-Film Transistors: Part I-Compact DC Modeling", IEEE Trans. Electron Devices, 56(12), 2952-2961, 2009; DOI: 10.1109/TED.2009.2033308. 
  2. M. J. Deen, O. Marinov, U. Zschieschang, H. Klauk, "Organic Thin-Film Transistors: Part II-Parameter Extraction", IEEE Trans. Electron Devices, 56(12), 2962-2968, 2009; DOI: 10.1109/TED.2009.2033309.  
  3. O. Marinov, M. J. Deen, J. Tejada, B. Iniguez, "Impact of the Fringing Capacitance at the Back of Thin-Film Transistors", Organic Electronics, 12(6), 936-949, 2011; DOI: 10.1016/j.orgel.2011.02.020. 
  4. O. Marinov, M. J. Deen, "Quasistatic Compact Modelling of Organic Thin-Film Transistors", Organic Electronics, 14(1), 295-311, 2013; DOI: 10.1016/j.orgel.2012.10.031. 
  5. O. Marinov, M. J. Deen, C. Feng, Y. Wu, "Precise Parameter Extraction Technique for Organic Thin-Film Transistors Operating in the Linear Regime", Journal of Applied Physics, 115(3), 034506, 2014; DOI: 10.1063/1.4862043.

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  • Implemented on 24 April 2015 by O. Marinov (DC, AC, quasi-static charge/capacitances)
  • Modified on 25 April 2015 by O. Marinov (derivative smoothness improved)
  • Modified on 7 May 2015 by O. Marinov (comments in code enhanced, monitor voltage drop on both contacts added)
  • Modified on 14 May 2015 by O. Marinov (monitor commented, to prepare the code for release)
  • Modified on 14 June 2015 by O. Marinov (redundant nodes GTS and GTD removed, since the effective overdrive voltages are in variables VGTS and VGTD)