Publications: Compact Models

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  1. JFETIDG Model for Independent Dual-Gate JFETs

    JFETIDG Model for Independent Dual-Gate JFETs

    2017-07-27 12:55:51 | Contributor(s): Colin McAndrew, Kejun Xia | doi:10.4231/D3KK94F1N

    JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical bipolar transistors; and junctionless MOS transistors.

  2. Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

    Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

    2018-04-16 17:56:34 | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3862BC8C

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.

  3. Purdue Solar Cell Model (PSM) - HIT

    Purdue Solar Cell Model (PSM) - HIT

    2018-04-16 18:09:10 | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3CV4BS80

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.

  4. Purdue Solar Cell Model (PSM) - Si

    Purdue Solar Cell Model (PSM) - Si

    2018-04-16 18:09:34 | Contributor(s): Mark Lundstrom, Muhammad Ashraful Alam, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Xingshu Sun | doi:10.4231/D3HM52M18

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for c-Si solar cells.

  5. Purdue Solar Cell Model (PSM) - CIGS/CdTe

    Purdue Solar Cell Model (PSM) - CIGS/CdTe

    2018-04-16 18:09:56 | Contributor(s): Xingshu Sun, Sourabh Dongaonkar, Raghu Vamsi Krishna Chavali, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3NC5SD6H

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for CIGS/CdTe.

  6. MIT TFET compact model including the impacts of non-idealities

    MIT TFET compact model including the impacts of non-idealities

    2017-05-08 02:34:24 | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W

    We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.

  7. UCSB Graphene Nanoribbon Interconnect Compact Model

    UCSB Graphene Nanoribbon Interconnect Compact Model

    2017-05-03 21:16:20 | Contributor(s): Junkai Jiang, Kaustav Banerjee, Wei Cao | doi:10.4231/D3NK3663N

    This model describes the circuit-level behavior of the (intercalation) doped GNR interconnect, and is compatible with both DC and transient SPICE simulations.

  8. Optical Ring Modulator with MIT Virtual Source ModSpec Compact Model

    Optical Ring Modulator with MIT Virtual Source ModSpec Compact Model

    2017-05-03 21:19:10 | Contributor(s): Lily Weng | doi:10.4231/D3PK0732D

    In this release, we apply MIT virtual source model in the driver circuits of Optical Ring Modulators.

  9. Thermoelectric Device Compact Model

    Thermoelectric Device Compact Model

    2017-03-27 13:46:21 | Contributor(s): Xufeng Wang, Kyle Conrad, Jesse Maassen, Mark Lundstrom | doi:10.4231/D3PN8XG7R

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.

  10. MIT Virtual Source Negative Capacitance (MVSNC) model

    MIT Virtual Source Negative Capacitance (MVSNC) model

    2017-03-07 01:06:52 | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T

    MIT Virtual Source Negative FET (MVSNC) model is a compact model for negative capacitance transistors that use a FE-oxide in the gate stack to achieve internal voltage amplification and steep subthreshold swing.

  11. UARK SiC Power MOSFET Model

    UARK SiC Power MOSFET Model

    2017-02-23 14:45:14 | Contributor(s): Mihir Mudholkar, Shamim Ahmed, Ramchandra Kotecha, Ty McNutt, Arman Ur Rashid, Tom Vrotsos, Alan Mantooth | doi:10.4231/D3QF8JK88

    A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from C2M0025120D.

  12. nMOSFET RF and noise model on standard 45nm SOI technology

    nMOSFET RF and noise model on standard 45nm SOI technology

    2017-01-05 16:57:48 | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K

    A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.

  13. Optical Ring Modulator ModSpec Compact Model

    Optical Ring Modulator ModSpec Compact Model

    2017-01-05 16:54:03 | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D31N7XN9P

    The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based ModSpec compact model is developed and simulated.

  14. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    2016-05-04 03:37:43 | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

  15. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    2016-04-07 19:19:34 | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

  16. Double-Clamped Silicon NEMS Resonators Model

    Double-Clamped Silicon NEMS Resonators Model

    2016-03-07 16:45:06 | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

    This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.

  17. MVS Nanotransistor Model (Silicon)

    MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

  18. MVS III-V HEMT model

    MVS III-V HEMT model

    2015-12-01 16:40:24 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.

  19. MVS Nanotransistor Model

    MVS Nanotransistor Model

    2015-12-01 15:13:44 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

  20. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    2015-10-07 14:56:43 | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.