General and Junction Primitives for Verilog-A Compact Models
2015-04-30 19:38:05 | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J
Useful macros and analog function building blocks for compact models.
UCSB Graphene Nanoribbon Interconnect Compact Model
2015-04-30 14:25:13 | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19
UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by UCSB NRL group.
III-V Tunnel FET Model
2015-04-21 13:49:00 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D
The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model
2015-04-09 14:21:12 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
2015-03-25 17:05:28 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
Universal TFET model
2015-01-26 14:08:11 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H
A universal TFET compact model implemented in verilog-A
2015-01-20 00:40:32 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q
This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
2014-11-21 15:20:44 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G
Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
FET pH Sensor Model
2015-06-04 14:39:01 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150
The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
Spin Switch Model
2014-10-28 13:21:08 | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D
We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model
2014-10-23 20:13:21 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48
The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model
2014-10-23 20:13:09 | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04
This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
TAG Solar Cell Model (p-i-n thin film)
2014-10-23 17:59:16 | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G
The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
Released Resonant Body Transistor (RBT) Model
2014-10-23 19:00:45 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3KS6J55W
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.
MIT Virtual Source GaNFET-RF ( MVSG-RF) Model
2014-10-23 18:43:25 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12
The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
Ambipolar Virtual Source Compact Model for Graphene FETs
2014-10-23 18:47:56 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273
This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).
Unreleased 1D CMOS Resonant Body Transistor with MIT Virtual Source (URBT-MVS) Model
2016-03-31 16:40:15 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations.
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