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Stanford 2D Semiconductor (S2DS) Transistor Model
2018-08-15 02:33:34 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D39882Q1F
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model
2018-08-15 02:33:04 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3F18SH56
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
2015-03-25 17:05:28 | Compact Models | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
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