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  1. Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model

    Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model

    2021-02-02 02:43:58 | Compact Models | Contributor(s): Lixia Han, Linlin Cai, Jinfeng Kang, Xiaoyan Liu, Peng Huang | doi:10.21981/MRFT-C373

    The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be embedded in SPICE and Cadence for circuit simulations.

  2. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

    2019-06-08 22:48:08 | Compact Models | Contributor(s): Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan | doi:10.21981/15GF-KX29

    The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

  3. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    2016-04-07 19:19:34 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.