PADRE simulates the electrical behavior of devices under steady
state, transient conditions or AC small-signal analysis. Multiple
devices can be treated, along with lumped element circuit networks.
PADRE can simulate physical structures of arbitrary geometry--including
heterostructures-with arbitrary doping profiles, which can be obtained
using analytical functions or directly from multidimensional process
simulators such as PROPHET or BICEPS.
For each electrical bias, PADRE solves a coupled set of partial
differential equations (PDEs). A variety of PDE systems are supported
which form a hierarchy of accuracy:
A variety of physical mechanisms are supported within these
formulations, including comprehensive representations of
carrier mobility, generation/recombination, and boundary conditions.
PADRE results can be supplemented by the Monte Carlo device
which is more appropriate for studying hot carrier effects such as
MOS substrate and gate current.
- electrostatic (Poisson equation)
- drift-diffusion (including carrier continuity equations)
- energy balance (including carrier temperature)
- electrothermal (including lattice heating)
Solutions are represented on a finite element grid within the space
of the device. PADRE supports box discretizations and general
finite element discretizations through non-uniform triangular grids,
which can be refined during the simulation process.
Compared with other device simulation programs, PADRE has a number
of important features:
- Energy balance equations
- Enhanced models
- More automatic error-controlled grid generation
- IV predictor-corrector continuation methods
- Modular vector/parallel assembly
- Vector/parallel linear algebra
- Mixed coupled/decoupled nonlinear iterations
- Mark R. Pinto (research!pinto), MH 6E-306
- Michael J. McLennan (mhcnet!mmc), ALC 2C-226