Introduction

PADRE simulates the electrical behavior of devices under steady state, transient conditions or AC small-signal analysis. Multiple devices can be treated, along with lumped element circuit networks.

PADRE can simulate physical structures of arbitrary geometry--including heterostructures-with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as PROPHET or BICEPS.

For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:

A variety of physical mechanisms are supported within these formulations, including comprehensive representations of carrier mobility, generation/recombination, and boundary conditions. PADRE results can be supplemented by the Monte Carlo device simulator SMC which is more appropriate for studying hot carrier effects such as MOS substrate and gate current.

Solutions are represented on a finite element grid within the space of the device. PADRE supports box discretizations and general finite element discretizations through non-uniform triangular grids, which can be refined during the simulation process.

Compared with other device simulation programs, PADRE has a number of important features:

Contacts