Tunneling in an Nanometer-Scaled Transistor

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Abstract

Electrons tunneling through the gate of an ultra-scaled transistor.

Tunneling in an Nanometer-Scaled Transistor The continued down-scaling of transistors has enabled tremendous advances in consumer electronics. We are reaching the limits where individual transistors or on-off electron valves are only a few nanometers in diameters wide. At these atomic length scales the electrons no longer act like billiard balls but rather like waves. As a result, electrons can tunnel through forbidden device regions, causing additional conduction and heat generation paths. Sophisticated modeling engines that consider a quantum mechanical description of the electrons, an atomistic description of the material, and non-equilibrium electron distributions, are needed for device design and optimization.

The "OMEN_FET" tool on nanoHUB.org enables such device modeling, and allows for the visualization of the electron density in such ultra-scaled structures through 3D volume rendering.

The current density was computed with the OMEN_FET tool and visualized with the nanoVIZ tool on nanoHUB.org.

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Researchers should cite this work as follows:

  • Gerhard Klimeck; Mathieu Luisier; Neerav Kharche; George A. Howlett; Insoo Woo; David Ebert (2011), "Tunneling in an Nanometer-Scaled Transistor," https://nanohub.org/resources/10537.

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