Self-Assembled Quantum Dot Structure (pyramid)

By Gerhard Klimeck1, Insoo Woo1, Muhammad Usman1, David S. Ebert1

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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A pyramidal InAs Quantum dot that is 27 atomic monolayers wide at the base and 15 atomic monolayers tall. This corresponds to 6.5 cubic unit cells width and 3.5 cubic unit cells height, which in turns corresponds to about 3.9 width and 2.1nm height. Typically these quantum dots are about 20nm wide and 5nm tall and encapsulated by GaAs. This small dot provides insight into the crystal symmetry of z zincblende crystal viewed from different angles and a pyramidal quantum dot.

Pyramidal InAs Quantum dot

The semiconductor InAs can be grown as a crystal on top of a GaAs substrate. Since the natural InAs lattice constant is larger than the one of GaAs the material can clump up to form nanoscale, perfect crystal structures that can take on pyramidal or dome shapes. Typical sizes of such quantum dots are 20nm in diameter and 5nm in height. The InAs material is typically capped / overgrown with GaAs. The central structure can confine additional electrons and form an artificial atom. Such artificial atoms can have optical properties like natural atoms like the ability to absorb and emit light. The frequency or wavelength of this optical activity can be designed by quantum dot size, shape and material composition.

The atomistic structure was computed with the Nanoelectronic Modeling Tool (NEMO 3D).



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Researchers should cite this work as follows:

  • Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert (2011), "Self-Assembled Quantum Dot Structure (pyramid),"

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