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By Neophytos Neophytou1, Shaikh S. Ahmed2, POLIZZI ERIC3, Gerhard Klimeck4, Mark Lundstrom4
1. Technical University of Vienna 2. Southern Illinois University Carbondale 3. University of Massachusetts, Amherst 4. Purdue University
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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Version 1.6.4 - published on 24 Mar 2016
doi:10.4231/D3M90243W cite this
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nguyen thi luong
20 Mar 2010
1.0 out of 5 stars
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03 Jun 2008
5.0 out of 5 stars
I have been using CNTfet tool as a part of my M.S Thesis at JNCASR,India which involves electrical and magneic transport measurements in CNTFETs.
A comparison between the real- time experimental data, which is unfortunately mired with the effects of hysteresis due to moisture, random telegraphic noise due to charge-traps in the gate-oxide etc, and the ideal/theoretical current-voltage curves generated by solving the Poisson’s equation using CNTfet, can be used to account for the irregularities.
Even more importantly, features such as density and potential profiles, incorporated in the tool help in developing a useful insight to the experimental results obtained, without worrying about issues that are associated with robustness and computational efficiency of the code.
The dedicated, en masse effort of the people associated with nanohub, to bring the scientific community on a common platform must certainly be lauded.