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This section is unavailable in an archive version of a tool. Consult the latest published version 2.0.1 for most current information.

ADEPT 2.0

By Jeff Gray1, Xufeng Wang1

1. Purdue University

This is an advanced version of ADEPT intended specifically for NPT users.

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This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 2.0.0.2
Published on 23 Jun 2011
Latest version: 2.0.1. All versions

doi:10.4231/D37M0405K cite this

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Abstract

ADEPT/F solves Poisson’s equation coupled with the hole and electron continuity equations in one spatial dimension in compositionally nonuniform semiconductors. It was originally written to model solar cells fabricated from a wide variety of materials, including amorphous silicon, copper indium diselenide, and cadmium telluride. However, since material parameters (band gap, mobility, etc.) can be input by the user, devices fabricated from any material for which these parameters are known can be modeled. Dark I-V, light I-V, and spectral response of solar cells (or any two terminal device) can be computed. Plots of many internal parameters, such as carrier density, recombination, electric field, etc., can be plotted at any operating point.

Homostructures and heterostructures, both abrupt and graded, can be modeled. Solar cell material systems modeled include ZnO/CdS/CIS, ZnO/CdS/CIGS, CdS/CdTe, a-Si, Si, AlGaAs/GaAs, GaSb, InP, and several others.

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.