SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge description, inclusion of the exchange-correlation corrections to the ground-state energy of the system when using quantum model, choice of metal or polysilicon gates, quantization of both electrons and holes, choice of full or partial ionization of the impurity atoms, capacitance calculation, etc. All these features make SCHRED one of the most sophisticated tools for modeling electrostatics in single gate and dual-gate capacitors that are integral part of conventional or dual-gate transistors.

This series is a set of materials formerly known as a "Learning Module." The presentations are meant to be viewed in sequence to get a full understanding of the topic. Please click on the following links in order to access each of the presentations in sequence.

• Theoretical Background on SCHRED
• Tutorial on SCHRED
• Short Tutorial on MOS Capacitors
• Example 1: Semi-classical Model
• Example 2: Quantum Mechanical Model
• Example 3: Poly-depletion and Quantum Mechanical Effects
• Design Exercise 1: Quantum Mechanical Threshold...
• Design Exercise 2: Low Frequency Capacitance...
• Quiz on MOS Capacitor
• Short Tutorial on Dual Gates
• Example 1: Influence of Back Gate
• Example 2: Quantum Charge Model
• Example 3: Capacitance and Threshold Voltage
• Quiz on Dual Gate Structures

Researchers should cite this work as follows:

• Dragica Vasileska (2006), "Modeling Single and Dual-Gate Capacitors using SCHRED," https://nanohub.org/resources/1148.

  BibTex | EndNote

1. ACUTE
2. microelectronics
3. MOS
4. nanoelectronics
5. nanotransistors
6. quantum