By Zhibin Ren1; Sebastien Goasguen1; Akira Matsudaira2; Shaikh S. Ahmed3; Kurtis Cantley4; Yang Liu5; Yunfei Gao1; Xufeng Wang1; Mark Lundstrom1

1. Purdue University 2. University of Illinois at Urbana-Champaign 3. Southern Illinois University Carbondale 4. University of Texas at Dallas 5. IBM

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

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Version 4.0.4 - published on 22 Mar 2016

doi:10.4231/D34746S60 cite this

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nanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of three transport models is currently available (drift-diffusion, classical ballistic, and quantum ballistic). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson's equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.

Major nanoMOS versions in the past

* nanoMOS 1.0 Original nanoMOS code for silicon MOSFETs. Written in Matlab and developed by Zhibin Ren in 2000.

* nanoMOS 2.0 Addition of Rappture interface support on

* nanoMOS 3.0 Support for III-V materials in semi-classical and quantum ballistic transport models.

* nanoMOS 3.5 Support for additional materials, enhanced drift-diffusion capabilities, and extensions and code restructuring for developers.

06/23/2009 A bug associated with temperature and mobility has been fixed. Now user can adjust the temperature and mobility model parameters and see the effects in output.

7/5/2009 New mobility parameters are added into source code.

nanoMOS related materials

'''nanoMOS 3.5 tutorial''' * [ Xufeng Wang (2009), "nanoMOS 3.5 First Time User Guide,"]

'''nanoMOS 2.0 tutorial''' * [ Fodor, James K; Guo, Jing (2007), "Introduction to nanoMOS,"] '''An introduction on nanoMOS 2.0 and related simulators on nanoHUB''' * [ Fodor, James K; Guo, Jing (2007), "A Tutorial for Nanoelectronics Simulation Tools,"]

'''nanoMOS 3.0 tutorial''' * [ Cantley, Kurtis; Lundstrom, Mark (2006), "NanoMOS 3.0 First Time User's Guide,"]


* Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, and Mark S. Lundstrom "nanoMOS 2.5: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," IEEE Trans. Electron. Dev., special issue on Nanoelectronics, Vol. 50, pp. 1914-1925, 2003

Thesis related to nanoMOS 

* [ Zhibin Ren, "Nanoscale MOSFETS: Physics, Simulation and Design", 2001]

* [ Ramesh Venugopal, "Modeling Quantum Transport in Nanoscale Transistors", 2003]

* Kurtis Cantley, "Performance Potential of III-V Materials in Nanoscale Transistors - a Device Simulation Perspective", 2007

Other related materials

* [ Datta, Supriyo "CQT: Concepts of Quantum Transport"", 2006]

* [ Lundstrom, Mark "ECE 612 Nanoscale Transistors (Fall 2006)"]


nanoMOS 1.0 was written in Matlab and developed by Zhibin Ren as part of his doctoral work at Purdue University. The development of NanoMOS was supported by the Semiconductor Research Corporation and by the Army Research Office through a Defense University Research Initiative on Nanotechnology grant.


Varies other people are also involved in the future development and expansion of nanoMOS. For the complete credits, please see the contributor list above.

Cite this work

Researchers should cite this work as follows:

  • Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom (2016), "NanoMOS," (DOI: 10.4231/D34746S60).

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