Support Options

Submit a Support Ticket


MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values

By Stella Quinones

University of Texas at El Paso

Published on


The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the website. By completing this exercise, the student is able to compare the mathematical model of the gate voltage of a MOS-Capacitor to the interpretation of the energy band diagram of a MOS-Capacitor. The example includes the simulation of a MOS-Capacitor with a p-type substrate and an n+poly silicon gate.


Dr. Stella Quinones is an Associate Professor of Electrical and Computer Engineering at The University of Texas at El Paso (UTEP) where she has been a faculty member for the past 13 years. She held the Forest O. and Henrietta Lewis Professorship in Electrical Engineering and is a 2010 UT Regents' Outstanding Teaching Award recipient and also received the 2011 Distinguished Achievement Award for Teaching Excellence. Her current research areas include planar and nano-scale selective CdTe deposition on CdTe(111), Si(100), Si(211) and SOI substrates using a conventional and state-of-the-art close-spaced sublimation (CSS) technique for applications related to solar cells and infrared detectors.

Sponsored by

This project is supported by NSF NCN Grant EEC-0634750.

Cite this work

Researchers should cite this work as follows:

  • Stella Quinones (2012), "MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values,"

    BibTex | EndNote

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.