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NanoMOS

By Sebastien Goasguen1, Akira Matsudaira2, Shaikh S. Ahmed3, Kurtis Cantley4, Mark Lundstrom1

1. Purdue University 2. University of Illinois at Urbana-Champaign 3. Southern Illinois University Carbondale 4. Boise State University

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

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Archive Version 3.0.4
Published on 22 Jul 2008, unpublished on 23 Feb 2009
Latest version: 4.0.3. All versions

doi:10.4231/D3JD4PP00 cite this

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Abstract

NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson’s equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.


NanoMOS 3.0 includes an improved treatment of carrier scattering. (Errors in self energy and the LDOS plot were also corrected.)


nanoFORGE project with latest source code download

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