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By Hong-Hyun Park1, Lang Zeng2, Matthew Buresh3, Siqi Wang1, Gerhard Klimeck1, Saumitra Raj Mehrotra1, Clemens Heitzinger1, Benjamin P Haley1

1. Purdue University 2. Peking University 3. Arizona State University

Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution

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Version 3.03 - published on 29 Jul 2014

doi:10.4231/D3FJ29D6F cite this

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    Osama Munir Nayfeh

    5.0 out of 5 stars

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    Saumitra Raj Mehrotra

    5.0 out of 5 stars

    I have been using nanowire for research as a part of my Masters thesis. Working with this tool has been a great experience with new insights into working of nanoscaled FETs. Comparison with experimental results was pretty close which gave an impetus to carry forward the research. Eg. Variation of threshold voltage with diameter ~5nm predicted by nanowire to be 33-49mV/nm is near to the experimentally reported result of 35 mV/nm by N. Singh et al at IEDM, Dec 2006. Also various optimization and comparative studies provided interesting results. One of the works led to conference paper -“Process Variation Study for Silicon Nanowire Transistors” presented at WMED, Boise, April 2007. I acknowledge the huge computational load managed and the user-friendly interface maintained by the nanohub team.

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    Jing Wang

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    Petrica Cristea

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    Please login to vote., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.