Nanoscale Transistors Lecture 7: Comparison to Experimental Results

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2012), "Nanoscale Transistors Lecture 7: Comparison to Experimental Results," https://nanohub.org/resources/14768.

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Time

Location

Burton Morgan, Rm 121, Purdue University, West Lafayette, IN

Tags

  1. nanotransistors
  2. nanoelectronics
  3. electronics from the bottom up
  4. experiments
Nanoscale Transistors Lecture 7: Comparison to Experimental Results
  • Lecture 7: Comparison to Experimental Results 1. Lecture 7: Comparison to Exper… 0
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  • ballistic MOSFET (MB) 2. ballistic MOSFET (MB) 24.733333333333334
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  • ballistic MOSFET (FD) 3. ballistic MOSFET (FD) 55.6
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  • question 4. question 98.933333333333337
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  • 2007 MOSFET parameters 5. 2007 MOSFET parameters 105.03333333333333
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  • ballistic MOSFET: linear region 6. ballistic MOSFET: linear regio… 151.63333333333333
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  • transfer characteristics 7. transfer characteristics 203.23333333333332
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  • log10 ID vs. VGS 8. log10 ID vs. VGS 230.2
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  • series resistance 9. series resistance 311.6
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  • series resistance 10. series resistance 350.4
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  • on-current analysis (injection velocity) 11. on-current analysis (injection… 430.96666666666664
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  • comparison to ballistic limit 12. comparison to ballistic limit 584.83333333333337
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  • ballistic MOSFET: saturated region 13. ballistic MOSFET: saturated re… 623.36666666666667
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  • linear-current analysis (injection velocity) 14. linear-current analysis (injec… 658.13333333333333
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  • ballistic MOSFET 15. ballistic MOSFET 786.86666666666667
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  • comparison to numerical simulations 16. comparison to numerical simula… 860.73333333333335
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  • comparison with experiment: Silicon 17. comparison with experiment: Si… 913.36666666666667
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  • comparison with experiment: InGaAs HEMTs 18. comparison with experiment: In… 996.93333333333328
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  • wrap-up 19. wrap-up 1163.2
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