ECE 606 Lecture 20: Heterojunction Bipolar Transistor

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Researchers should cite this work as follows:

  • Gerhard Klimeck (2012), "ECE 606 Lecture 20: Heterojunction Bipolar Transistor," https://nanohub.org/resources/15715.

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CIVL 2104, Purdue University, West Lafayette, IN

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ECE 606 Lecture 20: Heterojunction Bipolar Transistor
  • ECE606: Solid State Devices Lecture 20 Heterojunction Bipolar Transistor 1. ECE606: Solid State Devices Le… 0
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  • Outline 2. Outline 13.847180513847182
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  • How to make a better Transistor 3. How to make a better Transisto… 69.569569569569566
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  • Heterojunction Bipolar Transistors 4. Heterojunction Bipolar Transis… 252.41908575241911
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  • Mesa HBTs 5. Mesa HBTs 316.14948281614949
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  • Applications 6. Applications 432.93293293293294
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  • Background 7. Background 521.2545879212546
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  • Outline 8. Outline 574.27427427427426
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  • Topic Map 9. Topic Map 576.77677677677684
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  • Bandgaps and Lattice Matching 10. Bandgaps and Lattice Matching 583.717050383717
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  • Band Diagram at Equilibrium 11. Band Diagram at Equilibrium 960.89422756089425
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  • N-Al0.3Ga0.7As: p-GaAs (Type-I Heterojunction) 12. N-Al0.3Ga0.7As: p-GaAs (Type-I… 971.67167167167167
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  • Built-in Potential: Boundary Condition @Infinity 13. Built-in Potential: Boundary C… 1150.9175842509176
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  • Interface Boundary Conditions 14. Interface Boundary Conditions 1259.0256923590257
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  • Analytical Solution for Heterojunctions 15. Analytical Solution for Hetero… 1393.9272605939273
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  • Base Emitter Depletion Region 16. Base Emitter Depletion Region 1489.88988988989
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  • Outline 17. Outline 1528.9289289289291
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  • N-Al0.3Ga0.7As: p-GaAs (Type-I Heterojunction) 18. N-Al0.3Ga0.7As: p-GaAs (Type-I… 1532.6659993326662
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  • P-Al0.3Ga0.7As : n-GaAs (Type I junctions) 19. P-Al0.3Ga0.7As : n-GaAs (Type … 1567.6343009676343
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  • N-p vs P-n of Type I Heterostructure 20. N-p vs P-n of Type I Heterostr… 1641.8752085418753
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  • (AlInAs/InP) Type II Junctions 21. (AlInAs/InP) Type II Junctions 1687.2872872872874
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  • N-Al0.3Ga0.7As : n-GaAs Junctions 22. N-Al0.3Ga0.7As : n-GaAs Juncti… 1762.1287954621289
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  • P-GaSb : n-InAs (Type III) 23. P-GaSb : n-InAs (Type III) 1920.4204204204204
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  • P-GaSb : n-InAs (Type III) 24. P-GaSb : n-InAs (Type III) 1957.590924257591
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  • Conclusion 25. Conclusion 2057.123790457124
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  • Outline 26. Outline 2096.896896896897
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  • Abrupt Junction HBTs 27. Abrupt Junction HBTs 2099.5328661995331
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  • … but we are hoping for even better gain 28. … but we are hoping for even… 2398.2315648982317
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  • Outline 29. Outline 2433.2665999332667
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  • Abrupt Junction 30. Abrupt Junction 2437.4374374374374
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  • Graded Base-Emitter Junction 31. Graded Base-Emitter Junction 2513.8805472138806
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  • Current Gain 32. Current Gain 2600.5338672005341
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  • Advantages of HBT: Inverted Base Doping 33. Advantages of HBT: Inverted Ba… 2723.1231231231232
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  • Outline 34. Outline 2856.1561561561562
    00:00/00:00
  • How to make a better Transistor 35. How to make a better Transisto… 2862.0954287620957
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  • Graded Bases 36. Graded Bases 2891.4581247914584
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  • Graded Base HBTs 37. Graded Base HBTs 2996.62996329663
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  • Outline 38. Outline 3169.86986986987
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  • Double HBJT 39. Double HBJT 3178.4451117784452
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  • Offset Voltage 40. Offset Voltage 3414.4477811144479
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  • Offset Voltage 41. Offset Voltage 3493.3266599933268
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  • Offset Voltage Result 42. Offset Voltage Result 3652.5191858525195
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  • Outline 43. Outline 3694.5612278945614
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  • Putting the Terms Together 44. Putting the Terms Together 3702.3356690023356
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  • Epitaxial Layer Design (II) 45. Epitaxial Layer Design (II) 3910.5772439105772
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  • Epitaxial Layer Design (III) 46. Epitaxial Layer Design (III) 3956.08942275609
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  • Summary 47. Summary 4088.4551217884555
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