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By Gang Li1, yang xu1, Narayan Aluru1

1. University of Illinois at Urbana-Champaign

Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model

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Version 1.0a - published on 26 Feb 2015

doi:10.4231/D3GX44V81 cite this

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CGTB is an interactive tool for computing the charge density distribution and potential variation inside a MOS structure. A full tight binding description of the silicon atoms is coarse-grained to a 1-D tight binding description by using the periodicity of the electronic properties in the planes parallel to the dielectric layer. In the CGTB rapture tool, the user can specify the applied potential on the metal layer and the gap of between the silicon structure and the metal layer (i.e., the thickness of the dielectric layer). The charge density and potential profiles in the MOS structure are computed and plotted.

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This work was supported by the National Science Foundation.

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Researchers should cite this work as follows:

  • Gang Li; yang xu; Narayan Aluru (2015), "CGTB," (DOI: 10.4231/D3GX44V81).

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.