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CGTB
Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
Versions
Version | Released | DOI Handle | Published |
---|---|---|---|
1.0a | 26 Feb 2015 | doi:10.4231/D3GX44V81 | yes |
1 | 15 May 2006 | doi:10.4231/D3N29P61K | no |