ECE 695A Lecture 8R: Review Questions

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Abstract

  1. What is the distinction between BTI and NBTI phenomena?
  2. What does it mean that a process is thermally activated?
  3. What is the difference between parametric failure and catastrophic failure? Give examples.
  4. What are the time-characteristics of trapping, BTI, and NBTI?
  5. Which device will have poorer NBTI characteristics: buried channel PFET or surface channel PFET?
  6. Under what condition can NBTI occur for NMOS?
  7. Cite two experiments to support the assertion that NBTI is a interface-related reliability issue?

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 8R: Review Questions," https://nanohub.org/resources/16666.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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