ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

Published on

Abstract

Outline:

  • Background and features of HCI Degradation
    • Phenomenological observations
    • Origin of Hot carriers
  • Theory of Si-H Bond Dissociation
  • Theory of Si-O Bond Dissociation
  • Conclusions

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 13: Introductory Lecture on HCI Degradation," https://nanohub.org/resources/16887.

    BibTex | EndNote

Time

Location

EE 226, Purdue University, West Lafayette, IN

Tags

ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
  • Lecture 13: Introductory Lecture on HCI Degradation 1. Lecture 13: Introductory Lectu… 0
    00:00/00:00
  • copyright 2013 2. copyright 2013 69.202535869202535
    00:00/00:00
  • Outline of Lecture 13 3. Outline of Lecture 13 69.803136469803135
    00:00/00:00
  • Hot Carrier Degradation: Emerging Issue 4. Hot Carrier Degradation: Emerg… 125.99265932599266
    00:00/00:00
  • Hot carrier degradation 5. Hot carrier degradation 362.02869536202871
    00:00/00:00
  • Classical HCI … only ON state?! 6. Classical HCI … only ON stat… 533.80046713380045
    00:00/00:00
  • Impact on Device Performance 7. Impact on Device Performance 743.10977644310981
    00:00/00:00
  • Observation 1: Time exponents and recovery 8. Observation 1: Time exponents … 962.46246246246255
    00:00/00:00
  • Observation 2: HCI Degradation is Universal 9. Observation 2: HCI Degradation… 1148.948948948949
    00:00/00:00
  • ON-State Logic: Universality of various metrics 10. ON-State Logic: Universality o… 1421.0543877210544
    00:00/00:00
  • Observation 3: Hydrogen vs. deuterium 11. Observation 3: Hydrogen vs. de… 1488.4551217884552
    00:00/00:00
  • Summary: Empirical Observations 12. Summary: Empirical Observation… 1698.1314647981315
    00:00/00:00
  • Outline of Lecture 13 13. Outline of Lecture 13 1838.1047714381048
    00:00/00:00
  • Different types of dangling bonds 14. Different types of dangling bo… 1846.7467467467468
    00:00/00:00
  • Bias condition for hot carriers 15. Bias condition for hot carrier… 2172.9729729729729
    00:00/00:00
  • Contributions of SiO, SiH, and trapped Charges 16. Contributions of SiO, SiH, and… 2352.0186853520186
    00:00/00:00
  • Outline 17. Outline 2461.3279946613279
    00:00/00:00
  • Dissociation of SiH and SiO bonds 18. Dissociation of SiH and SiO bo… 2473.6069402736071
    00:00/00:00
  • NBTI & HCI degradation compared 19. NBTI & HCI degradation compare… 2520.9542876209543
    00:00/00:00
  • Time Exponent of Si-H dissociation 20. Time Exponent of Si-H dissocia… 2581.4147480814149
    00:00/00:00
  • Universal Scaling for SiH Bonds 21. Universal Scaling for SiH Bond… 2739.9065732399067
    00:00/00:00
  • What about Relaxation? 22. What about Relaxation? 2794.4611277944614
    00:00/00:00
  • Very Small Relaxation for HCI 23. Very Small Relaxation for HCI 2850.1835168501834
    00:00/00:00
  • Origin of Si-H and Si-D bond dissociation 24. Origin of Si-H and Si-D bond d… 2908.1081081081084
    00:00/00:00
  • Outline 25. Outline 2976.1761761761763
    00:00/00:00
  • Dissociation of SiO Bonds 26. Dissociation of SiO Bonds 2992.6593259926594
    00:00/00:00
  • Different types of dangling bonds 27. Different types of dangling bo… 3047.0470470470473
    00:00/00:00
  • Dissociation barriers and their distribution 28. Dissociation barriers and thei… 3089.0223556890223
    00:00/00:00
  • SiO bond dispersion model 29. SiO bond dispersion model 3189.0890890890892
    00:00/00:00
  • Universal scaling function for SiO bonds 30. Universal scaling function for… 3487.2872872872872
    00:00/00:00
  • Conclusions 31. Conclusions 3558.9923256589923
    00:00/00:00