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ECE 695A Lecture 13R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Review Questions:

  1. Both SiH and SiO are involved in HCI degradation. Give two evidences.
  2. Why doesn’t HCI occur during NBTI stress condition?
  3. I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal curve.
  4. What is the physical origin of distribution of bond-strengths for SiO bonds?
  5. Why is it that SiH bonds are easily repassivated, while SiO bond are not. What can you do to repassivate these bonds?
  6. HCI is a bigger problem for NMOS compared to PMOS – what could be the reason.
  7. Why did people expect HCI to disappear below 1V?

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 13R: Review Questions," https://nanohub.org/resources/16888.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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