Support

Support Options

Submit a Support Ticket

 

ECE 612 Nanoscale Transistors (Fall 2006)

By Mark Lundstrom

Purdue University

Category

Courses

Published on

Abstract

image

Nanoscale Transistors is a five-week online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important applications, and trends and directions. Registration now open

Please Note: An updated version of this course, for Fall 2008, is available.

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

Course Information Website

Publications

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2006), "ECE 612 Nanoscale Transistors (Fall 2006)," https://nanohub.org/resources/1705.

    BibTex | EndNote

Time

Tags

Lecture Number/Topic Online Lecture Video Lecture Notes Supplemental Material Suggested Exercises
ECE 612 Introductory Lecture (Fall 06) View Flash Notes
ECE 612 Lecture 1: MOSFET Review View Flash Notes
ECE 612 Lecture 2: Introduction to Device Simulation View Flash Notes
ECE 612 Lecture 3: 1D MOS Electrostatics View Flash Notes
ECE 612 Lecture 4: MOS Capacitors View Flash Notes
ECE 612 Lecture 5: Poly Si Gate MOS Capacitors View Flash Notes
ECE 612 Lecture 6: Quantum Mechanical Effects View Flash Notes
ECE 612 Lecture 7: MOSFET IV, Part I View Flash Notes
ECE 612 Lecture 8: MOSFET IV, Part II View Flash Notes
ECE 612 Lecture 9: MOSFET IV, Part III View Flash Notes
ECE 612 Lecture 10: The Ballistic MOSFET View Flash Notes
ECE 612 Lecture 11: The Quasi-ballistic MOSFET View Flash Notes
ECE 612 Lecture 12: Subthreshold Conduction View Flash Notes
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances View Flash Notes
ECE 612 Lecture 14: Effective Mobility View Flash Notes
ECE 612 Lecture 15: 2D Electrostatics, Part I View Flash Notes
ECE 612 Lecture 16: 2D Electrostatics, Part II View Flash Notes
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective View Flash View Notes
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects …

ECE 612 Lecture 17: Device Scaling View Flash Notes
ECE 612 Lecture 18: VT Engineering View Flash Notes
ECE 612 Lecture 19: Series Resistance View Flash Notes
ECE 612 Lecture 20: MOSFET Leakage View Flash Notes
ECE 612 Lecture 21: Gate resistance and Interconnects View Flash Notes
ECE 612 Lecture 22: CMOS Process Steps View Flash Notes
ECE 612 Lecture 23: CMOS Process Flow View Flash Notes
ECE 612 Lecture 24: CMOS Circuits, Part I View Flash Notes
ECE 612 Lecture 25: CMOS Circuits, Part I I View Flash Notes
ECE 612 Lecture 26: CMOS Limits View Flash Notes
ECE 612 Lecture 27: RF CMOS View Flash Notes
ECE 612 Lecture 28: Overview of SOI Technology View Flash Notes
ECE 612 Lecture 29: SOI Electrostatics View Flash Notes
ECE 612 Lecture 30: UTB SOI Electrostatics View Flash Notes
ECE 612 Lecture 31: Heterostructure Fundamentals View Flash Notes
ECE 612 Lecture 32: Heterojunction Diodes View Flash Notes
ECE 612 Lecture 33: Heterojunction Bipolar Transistors View Flash Notes
ECE 612 Lecture 34: Heterostructure FETs View Flash Notes

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.