SPICE Model of Graphene Nanoribbon FETs (GNRFET)

By Ying-Yu Chen1, Morteza Gholipour2, Artem Rogachev1, Amit Sangai1, Deming Chen1

1. University of Illinois at Urbana-Champaign 2. University of Tehran

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Abstract

This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the following publications:

[1] Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, and Deming Chen, “A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gateand Circuit-Level Delay and Power Analysis Under Process Variation,” IEEE Transactions on Nanotechnology, vol. 14, no. 6, Nov. 2015.

[2] M. Gholipour, Y.-Y. Chen, A. Sangai, N. Masoumi, and D. Chen, “Analytical SPICE-Compatible Model of Schottky-Barrier-type GNRFETs with Performance Analysis,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 2, pp. 650-663, Feb. 2016.

[3] Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay and Power Analysis Under Process Variation. IEEE/ACM Design, Automation & Test in Europe, pp. 1789-1794.

[4] M. Gholipour, Y-Y. Chen, A. Sangai, and D. Chen, “Highly Accurate SPICE-Compatible Modeling for Single- and Double-Gate GNRFETs with Studies on Technology Scaling,” Proceedings of IEEE/ACM Design, Automation & Test in Europe (DATE), Dresden, Germany, March 2014.

 

Sponsored by

This work is partially supported by NSF.

Publications

[1] Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, and Deming Chen, “A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gateand Circuit-Level Delay and Power Analysis Under Process Variation,” IEEE Transactions on Nanotechnology, vol. 14, no. 6, Nov. 2015.

[2] M. Gholipour, Y.-Y. Chen, A. Sangai, N. Masoumi, and D. Chen, “Analytical SPICE-Compatible Model of Schottky-Barrier-type GNRFETs with Performance Analysis,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 2, pp. 650-663, Feb. 2016.

Cite this work

Researchers should cite this work as follows:

  • Ying-Yu Chen; Morteza Gholipour; Artem Rogachev; Amit Sangai; Deming Chen (2013), "SPICE Model of Graphene Nanoribbon FETs (GNRFET)," https://nanohub.org/resources/17074.

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