SPICE Model of Graphene Nanoribbon FETs

By Ying-Yu Chen1, Morteza Gholipour2, Artem Rogachev1, Amit Sangai1, Deming Chen1

1. University of Illinois at Urbana-Champaign 2. University of Tehran

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Abstract

Graphene Nano-Ribbons Field-Effect Transistors HSPICE implementation based on the following two publications:

[1] Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay and Power Analysis Under Process Variation. IEEE/ACM Design, Automation & Test in Europe, pp. 1789-1794.
[2] M. Gholipour, Y-Y. Chen, A. Sangai, and D. Chen, (2014). Highly Accurate SPICE-Compatible Modeling for Single- and Double-Gate GNRFETs with Studies on Technology Scaling. IEEE/ACM Design, Automation & Test in Europe, to appear.

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This work is partially supported by NSF.

Publications

[1] Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay and Power Analysis Under Process Variation. IEEE/ACM Design, Automation & Test in Europe, pp. 1789-1794.
[2] M. Gholipour, Y-Y. Chen, A. Sangai, and D. Chen, (2014). Highly Accurate SPICE-Compatible Modeling for Single- and Double-Gate GNRFETs with Studies on Technology Scaling. IEEE/ACM Design, Automation & Test in Europe, to appear.

Cite this work

Researchers should cite this work as follows:

  • Ying-Yu Chen; Morteza Gholipour; Artem Rogachev; Amit Sangai; Deming Chen (2013), "SPICE Model of Graphene Nanoribbon FETs," https://nanohub.org/resources/17074.

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