Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
22 Sep 2016 | Online Presentations | Contributor(s): Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
Analysis of Techniques for Measuring Carrier Recombination Lifetime
27 Nov 2013 | Online Presentations | Contributor(s): Richard Keith Ahrenkiel
Rapid, accurate and contactless measurement of the recombination lifetime is a very important activity in photovoltaics. The excess carrier lifetime (Δn(t)) is the most critical and variable parameter in the development of photovoltaic materials. Device performance can be accurately...
Microelectronics in Transition
18 Oct 2013 | Online Presentations | Contributor(s): Dennis Buss
For the past 40 years, the semiconductor industry has been dominated by Moore’s Law scaling of CMOS. However, CMOS scaling will end in this decade. The Era of Moore’s Law scaling will give way to the Era of Accelerated Technology Innovation (ATI).
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
The Road Ahead for Carbon Nanotube Transistors
09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.
From Lilienfeld to Landauer: Understanding the nanoscale transistor
30 Apr 2013 | Online Presentations | Contributor(s): Mark Lundstrom
The talk is organized around the so-called Virtual Source model of the MOSFET and will show how the traditional view of the MOSFET (which dates from the 1960s) can be adapted to todays nanoscale transistors in a physically insightful and simple way. The talk aims to show that understanding...